Circuit-Based Electrothermal Modeling of SiC Power Modules With Nonlinear Thermal Models
نویسندگان
چکیده
Silicon carbide (SiC) power devices have the potential to operate at high temperatures beyond capabilities of silicon devices. At increased temperatures, temperature-dependent material properties SiC die and package multilayer structure can influence electrothermal (ET) device performance. In this article, a new step-back-correction technique implemented in finite-difference-method-based thermal modeling tool is proposed reduce computational cost while maintaining good accuracy ET simulations for multichip modules. The take temperature dependence conductivity $k(T)$ both conduction switching losses into account. importance considering accurate prediction demonstrated impedance evaluations characterized by high-temperature swings, as well 100-kHz boost converter with low amplitudes steady state. validated COMSOL infrared camera measurements on an example custom-designed custom-manufactured half-bridge module.
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Article history: Received 25 May 2015 Accepted 11 June 2015 Available online xxxx
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ژورنال
عنوان ژورنال: IEEE Transactions on Power Electronics
سال: 2022
ISSN: ['1941-0107', '0885-8993']
DOI: https://doi.org/10.1109/tpel.2022.3147688